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18-Mbit QDR II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
18-Mbit QDR(R) II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
CY7C11611KV18, CY7C11761KV18 CY7C11631KV18, CY7C11651KV18 (R)
Features
Functional Description
The CY7C11611KV18, CY7C11761KV18, CY7C11631KV18, and CY7C11651KV18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR II+ architecture. Similar to QDR II architecture, QDR II+ architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has dedicated data outputs to support read operations and the write port has dedicated data inputs to support write operations. QDR II+ architecture has separate data inputs and data outputs to completely eliminate the need to "turn around" the data bus that exists with common I/O devices. Each port is accessed through a common address bus. Addresses for read and write are latched on alternate rising edges of the input (K) clock. Accesses to the QDR II+ read and write ports are completely independent of one another. To maximize data throughput, both read and write ports are equipped with DDR interfaces. Each address location is associated with four 8-bit words (CY7C11611KV18), 9-bit words (CY7C11761KV18), 18-bit words (CY7C11631KV18), or 36-bit words (CY7C11651KV18) that burst sequentially into or out of the device. Because data is transferred into and out of the device on every rising edge of both input clocks (K and K), memory bandwidth is maximized while simplifying system design by eliminating bus "turn arounds". Depth expansion is accomplished with port selects, which enables each port to operate independently. All synchronous inputs pass through input registers controlled by the K or K input clocks. All data outputs pass through output registers controlled by the K or K input clocks. Writes are conducted with on-chip synchronous self-timed write circuitry. These devices are down bonded from the 65 nm 72M QDRII+/DDRII+ devices and hence have the same IDD/ISB1 values and JTAG ID code as the equivalent 72M device options. For details refer to the application note AN53189, 65 nm Technology Interim QDRII+/DDRII+ SRAM Device Family Description. Table 1. Selection Guide Description Maximum Operating Frequency Maximum Operating Current 550 500 450 400 MHz MHz MHz MHz Unit 550 x8 900 x9 900 x18 920 500 830 830 850 450 760 760 780 400 690 690 710 MHz mA
Separate independent read and write data ports Supports concurrent transactions 550 MHz clock for high bandwidth 4-word burst for reducing address bus frequency Double Data Rate (DDR) interfaces on both read and write ports (data transferred at 1100 MHz) at 550 MHz Available in 2.5 clock cycle latency Two input clocks (K and K) for precise DDR timing SRAM uses rising edges only Echo clocks (CQ and CQ) simplify data capture in high speed systems Data valid pin (QVLD) to indicate valid data on the output Single multiplexed address input bus latches address inputs for read and write ports Separate port selects for depth expansion Synchronous internally self timed writes QDR(R) II+ operates with 2.5 cycle read latency when DOFF is asserted HIGH Operates similar to QDR I device with 1 cycle read latency when DOFF is asserted LOW Available in x8, x9, x18, and x36 configurations Full data coherency, providing most current data Core VDD = 1.8V 0.1V; I/O VDDQ = 1.4V to VDD [1] Supports both 1.5V and 1.8V I/O supply HSTL inputs and variable drive HSTL output buffers Available in 165-ball FBGA package (13 x 15 x 1.4 mm) Offered in both Pb-free and non Pb-free packages JTAG 1149.1 compatible test access port Phase Locked Loop (PLL) for accurate data placement

Configurations
With Read cycle latency of 2.5 cycles: CY7C11611KV18 - 2M x 8 CY7C11761KV18 - 2M x 9 CY7C11631KV18 - 1M x 18 CY7C11651KV18 - 512K x 36
x36 1310 1210 1100 1000
Cypress Semiconductor Corporation Document Number: 001-53197 Rev. *C
*
198 Champion Court
*
San Jose, CA 95134-1709 * 408-943-2600 Revised January 31, 2011
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CY7C11611KV18, CY7C11761KV18 CY7C11631KV18, CY7C11651KV18
Logic Block Diagram (CY7C11611KV18)
D[7:0]
8
Read Add. Decode
Write Add. Decode
A(18:0)
19
Write Reg
Address Register
Write Reg
Write Reg
Write Reg
Address Register
19
A(18:0)
512K x 8 Array
512K x 8 Array
512K x 8 Array
512K x 8 Array
K K CLK Gen.
Control Logic
RPS
DOFF
Read Data Reg. CQ 32
VREF WPS NWS[1:0]
16 Control Logic 16
Reg. Reg.
Reg. 8 8 8 8
CQ 8 Q[7:0] QVLD
Logic Block Diagram (CY7C11761KV18)
D[8:0]
9
Read Add. Decode
Write Add. Decode
A(18:0)
19
Write Reg
Address Register
Write Reg
Write Reg
Write Reg
Address Register
19
A(18:0)
512K x 9 Array
512K x 9 Array
512K x 9 Array
512K x 9 Array
K K CLK Gen.
Control Logic
RPS
DOFF
Read Data Reg. CQ 36
VREF WPS BWS[0]
18 Control Logic 18
Reg. Reg.
Reg. 9 9 9 9
CQ 9 Q[8:0] QVLD
Note 1. The Cypress QDR II+ devices surpass the QDR consortium specification and can support VDDQ = 1.4V to VDD.
Document Number: 001-53197 Rev. *C
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CY7C11611KV18, CY7C11761KV18 CY7C11631KV18, CY7C11651KV18
Logic Block Diagram (CY7C11631KV18)
D[17:0]
18
Read Add. Decode
Write Add. Decode
A(17:0)
18
Write Reg
Address Register
Write Reg
Write Reg
Write Reg
Address Register
18
A(17:0)
256K x 18 Array
256K x 18 Array
256K x 18 Array
256K x 18 Array
K K CLK Gen.
Control Logic
RPS
DOFF
Read Data Reg. CQ 72
VREF WPS BWS[1:0]
36 Control Logic 36
Reg. Reg.
Reg. 18 18 18 18
CQ 18 Q[17:0] QVLD
Logic Block Diagram (CY7C11651KV18)
D[35:0]
36
Read Add. Decode
Write Add. Decode
A(16:0)
17
Write Reg
Address Register
Write Reg
Write Reg
Write Reg
Address Register
17
A(16:0)
128K x 36 Array
128K x 36 Array
128K x 36 Array
128K x 36 Array
K K CLK Gen.
Control Logic
RPS
DOFF
Read Data Reg. CQ 144
VREF WPS BWS[3:0]
72 Control Logic 72
Reg. Reg.
Reg. 36 36 36 36
CQ 36 Q[35:0] QVLD
Document Number: 001-53197 Rev. *C
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CY7C11611KV18, CY7C11761KV18 CY7C11631KV18, CY7C11651KV18
Contents
Pin Configuration ............................................................. 5 165-Ball FBGA (13 x 15 x 1.4 mm) Pinout .................. 5 Functional Overview ........................................................ 9 Read Operations ......................................................... 9 Write Operations ......................................................... 9 Byte Write Operations ................................................. 9 Concurrent Transactions ............................................. 9 Depth Expansion ....................................................... 10 Programmable Impedance ........................................ 10 Echo Clocks .............................................................. 10 Valid Data Indicator (QVLD) ...................................... 10 PLL ............................................................................ 10 Application Example ...................................................... 10 IEEE 1149.1 Serial Boundary Scan (JTAG) .................. 13 Disabling the JTAG Feature ...................................... 13 Test Access Port--Test Clock ................................... 13 Test Mode Select (TMS) ........................................... 13 Test Data-In (TDI) ..................................................... 13 Test Data-Out (TDO) ................................................. 13 Performing a TAP Reset ........................................... 13 TAP Registers ........................................................... 13 TAP Instruction Set ................................................... 13 TAP Electrical Characteristics ...................................... 16 TAP AC Switching Characteristics ............................... 17 TAP Timing and Test Conditions .................................. 17 Power Up Sequence in QDR II+ SRAM ......................... 20 Power Up Sequence ................................................. 20 PLL Constraints ......................................................... 20 Maximum Ratings ........................................................... 21 Operating Range ............................................................. 21 Neutron Soft Error Immunity ......................................... 21 DC Electrical Characteristics ..................................... 21 AC Electrical Characteristics ..................................... 22 Capacitance .................................................................... 23 Thermal Resistance ........................................................ 23 Switching Characteristics .............................................. 24 Switching Waveforms .................................................... 25 Read/Write/Deselect Sequence ................................ 25 Ordering Information ...................................................... 26 Ordering Code Definitions ......................................... 26 Package Diagram ............................................................ 27 Document History Page ................................................. 28 Sales, Solutions, and Legal Information ...................... 29 Worldwide Sales and Design Support ....................... 29 Products .................................................................... 29 PSoC Solutions ......................................................... 29
Document Number: 001-53197 Rev. *C
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CY7C11611KV18, CY7C11761KV18 CY7C11631KV18, CY7C11651KV18
Pin Configuration
The pin configuration for CY7C11611KV18, CY7C11761KV18, CY7C11631KV18, and CY7C11651KV18 follows.[2]
165-Ball FBGA (13 x 15 x 1.4 mm) Pinout
CY7C11611KV18 (2M x 8) 1 A B C D E F G H J K L M N P R CQ NC NC NC NC NC NC DOFF NC NC NC NC NC NC TDO 2 NC/72M NC NC D4 NC NC D5 VREF NC NC Q6 NC D7 NC TCK 3 A NC NC NC Q4 NC Q5 VDDQ NC NC D6 NC NC Q7 A 4 WPS A VSS VSS VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VSS VSS A A 5 NWS1 NC/288M A VSS VSS VDD VDD VDD VDD VDD VSS VSS A A A 6 K K NC VSS VSS VSS VSS VSS VSS VSS VSS VSS A QVLD NC 7 NC/144M NWS0 A VSS VSS VDD VDD VDD VDD VDD VSS VSS A A A 8 RPS A VSS VSS VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VSS VSS A A 9 A NC NC NC NC NC NC VDDQ NC NC NC NC NC NC A 10 NC/36M NC NC NC D2 NC NC VREF Q1 NC NC NC NC NC TMS 11 CQ Q3 D3 NC Q2 NC NC ZQ D1 NC Q0 D0 NC NC TDI
CY7C11761KV18 (2M x 9) 1 A B C D E F G H J K L M N P R CQ NC NC NC NC NC NC DOFF NC NC NC NC NC NC TDO 2 NC/72M NC NC D5 NC NC D6 VREF NC NC Q7 NC D8 NC TCK 3 A NC NC NC Q5 NC Q6 VDDQ NC NC D7 NC NC Q8 A 4 WPS A VSS VSS VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VSS VSS A A 5 NC NC/288M A VSS VSS VDD VDD VDD VDD VDD VSS VSS A A A 6 K K NC VSS VSS VSS VSS VSS VSS VSS VSS VSS A QVLD NC 7 NC/144M BWS0 A VSS VSS VDD VDD VDD VDD VDD VSS VSS A A A 8 RPS A VSS VSS VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VSS VSS A A 9 A NC NC NC NC NC NC VDDQ NC NC NC NC NC NC A 10 NC/36M NC NC NC D3 NC NC VREF Q2 NC NC NC NC D0 TMS 11 CQ Q4 D4 NC Q3 NC NC ZQ D2 NC Q1 D1 NC Q0 TDI
Note 2. NC/36M, NC/72M, NC/144M, and NC/288M are not connected to the die and can be tied to any voltage level.
Document Number: 001-53197 Rev. *C
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CY7C11611KV18, CY7C11761KV18 CY7C11631KV18, CY7C11651KV18
Pin Configuration
(continued)
The pin configuration for CY7C11611KV18, CY7C11761KV18, CY7C11631KV18, and CY7C11651KV18 follows.[2]
165-Ball FBGA (13 x 15 x 1.4 mm) Pinout
CY7C11631KV18 (1M x 18) 1 A B C D E F G H J K L M N P R CQ NC NC NC NC NC NC DOFF NC NC NC NC NC NC TDO 2 Q9 NC D11 NC Q12 D13 VREF NC NC Q15 NC D17 NC TCK 3 D9 D10 Q10 Q11 D12 Q13 VDDQ D14 Q14 D15 D16 Q16 Q17 A 4 WPS A VSS VSS VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VSS VSS A A 5 BWS1 NC A VSS VSS VDD VDD VDD VDD VDD VSS VSS A A A 6 K K NC VSS VSS VSS VSS VSS VSS VSS VSS VSS A QVLD NC 7 NC/288M BWS0 A VSS VSS VDD VDD VDD VDD VDD VSS VSS A A A 8 RPS A VSS VSS VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VSS VSS A A 9 A NC NC NC NC NC NC VDDQ NC NC NC NC NC NC A 10 NC/72M NC Q7 NC D6 NC NC VREF Q4 D3 NC Q1 NC D0 TMS 11 CQ Q8 D8 D7 Q6 Q5 D5 ZQ D4 Q3 Q2 D2 D1 Q0 TDI NC/144M NC/36M
CY7C11651KV18 (512K x 36) 1 A B C D E F G H J K L M N P R CQ Q27 D27 D28 Q29 Q30 D30 DOFF D31 Q32 Q33 D33 D34 Q35 TDO 2 Q18 Q28 D20 D29 Q21 D22 VREF Q31 D32 Q24 Q34 D26 D35 TCK 3 D18 D19 Q19 Q20 D21 Q22 VDDQ D23 Q23 D24 D25 Q25 Q26 A 4 WPS A VSS VSS VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VSS VSS A A 5 BWS2 BWS3 A VSS VSS VDD VDD VDD VDD VDD VSS VSS A A A 6 K K NC VSS VSS VSS VSS VSS VSS VSS VSS VSS A QVLD NC 7 BWS1 BWS0 A VSS VSS VDD VDD VDD VDD VDD VSS VSS A A A 8 RPS A VSS VSS VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VSS VSS A A 9 D17 D16 Q16 Q15 D14 Q13 VDDQ D12 Q12 D11 D10 Q10 Q9 A 10 Q17 Q7 D15 D6 Q14 D13 VREF Q4 D3 Q11 Q1 D9 D0 TMS 11 CQ Q8 D8 D7 Q6 Q5 D5 ZQ D4 Q3 Q2 D2 D1 Q0 TDI NC/288M NC/72M NC/36M NC/144M
Document Number: 001-53197 Rev. *C
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CY7C11611KV18, CY7C11761KV18 CY7C11631KV18, CY7C11651KV18
Table 2. Pin Definitions Pin Name D[x:0] I/O Pin Description
InputData Input Signals. Sampled on the rising edge of K and K clocks when valid write operations are active. Synchronous CY7C11611KV18 D[7:0] CY7C11761KV18 D[8:0] CY7C11631KV18 D[17:0] CY7C11651KV18 D[35:0] InputWrite Port Select Active LOW. Sampled on the rising edge of the K clock. When asserted active, a Synchronous write operation is initiated. Deasserting deselects the write port. Deselecting the write port ignores D[x:0]. InputNibble Write Select 0, 1 Active LOW (CY7C11611KV18 Only). Sampled on the rising edge of the K Synchronous and K clocks when write operations are active. Used to select which nibble is written into the device during the current portion of the write operations. NWS0 controls D[3:0] and NWS1 controls D[7:4]. All the Nibble Write Selects are sampled on the same edge as the data. Deselecting a Nibble Write Select ignores the corresponding nibble of data and it is not written into the device. InputByte Write Select 0, 1, 2 and 3 Active LOW. Sampled on the rising edge of the K and K clocks when Synchronous write operations are active. Used to select which byte is written into the device during the current portion of the write operations. Bytes not written remain unaltered. CY7C11761KV18 BWS0 controls D[8:0] CY7C11631KV18 BWS0 controls D[8:0] and BWS1 controls D[17:9]. CY7C11651KV18 BWS0 controls D[8:0], BWS1 controls D[17:9], BWS2 controls D[26:18] and BWS3 controls D[35:27]. All the Byte Write Selects are sampled on the same edge as the data. Deselecting a Byte Write Select ignores the corresponding byte of data and it is not written into the device. InputAddress Inputs. Sampled on the rising edge of the K clock during active read and write operations. These Synchronous address inputs are multiplexed for both read and write operations. Internally, the device is organized as 2M x 8 (4 arrays each of 512K x 8) for CY7C11611KV18, 2M x 9 (4 arrays each of 512K x 9) for CY7C11761KV18, 1M x 18 (4 arrays each of 256K x 18) for CY7C11631KV18 and 512K x 36 (4 arrays each of 128K x 36) for CY7C11651KV18. Therefore, only 19 address inputs are needed to access the entire memory array of CY7C11611KV18 and CY7C11761KV18, 18 address inputs for CY7C11631KV18 and 17 address inputs for CY7C11651KV18. These inputs are ignored when the appropriate port is deselected. OutputsData Output Signals. These pins drive out the requested data when the read operation is active. Valid Synchronous data is driven out on the rising edge of the K and K clocks during read operations. On deselecting the read port, Q[x:0] are automatically tristated. CY7C11611KV18 Q[7:0] CY7C11761KV18 Q[8:0] CY7C11631KV18 Q[17:0] CY7C11651KV18 Q[35:0] InputRead Port Select Active LOW. Sampled on the rising edge of positive input clock (K). When active, a Synchronous read operation is initiated. Deasserting deselects the read port. When deselected, the pending access is allowed to complete and the output drivers are automatically tristated following the next rising edge of the K clock. Each read access consists of a burst of four sequential transfers. Valid output indicator Input Clock Input Clock Echo Clock Echo Clock Valid Output Indicator. The Q Valid indicates valid output data. QVLD is edge aligned with CQ and CQ. Positive Input Clock Input. The rising edge of K is used to capture synchronous inputs to the device and to drive out data through Q[x:0]. All accesses are initiated on the rising edge of K. Negative Input Clock Input. K is used to capture synchronous inputs being presented to the device and to drive out data through Q[x:0]. Synchronous Echo Clock Outputs. This is a free running clock and is synchronized to the input clock (K) of the QDR II+. The timings for the echo clocks are shown in the Switching Characteristics on page 24. Synchronous Echo Clock Outputs. This is a free running clock and is synchronized to the input clock (K) of the QDR II+.The timings for the echo clocks are shown in the Switching Characteristics on page 24.
WPS NWS0, NWS1,
BWS0, BWS1, BWS2, BWS3
A
Q[x:0]
RPS
QVLD K K CQ CQ
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CY7C11611KV18, CY7C11761KV18 CY7C11631KV18, CY7C11651KV18
Table 2. Pin Definitions (continued) Pin Name ZQ I/O Input Pin Description Output Impedance Matching Input. This input is used to tune the device outputs to the system data bus impedance. CQ, CQ, and Q[x:0] output impedance are set to 0.2 x RQ, where RQ is a resistor connected between ZQ and ground. Alternatively, this pin can be connected directly to VDDQ, which enables the minimum impedance mode. This pin cannot be connected directly to GND or left unconnected. PLL Turn Off Active LOW. Connecting this pin to ground turns off the PLL inside the device. The timings in the PLL turned off operation differs from those listed in this data sheet. For normal operation, this pin can be connected to a pull up through a 10 K or less pull up resistor. The device behaves in QDR I mode when the PLL is turned off. In this mode, the device can be operated at a frequency of up to 167 MHz with QDR I timing. TDO for JTAG. TCK Pin for JTAG. TDI Pin for JTAG. TMS Pin for JTAG. Not Connected to the Die. Can be tied to any voltage level. Not Connected to the Die. Can be tied to any voltage level. Not Connected to the Die. Can be tied to any voltage level. Reference Voltage Input. Static input used to set the reference level for HSTL inputs, outputs, and AC measurement points. Ground for the Device.
DOFF
Input
TDO TCK TDI TMS NC
Output Input Input Input N/A N/A N/A InputReference Ground
NC/144M NC/288M
VREF VDD VSS VDDQ
Power Supply Power Supply Inputs to the Core of the Device. Power Supply Power Supply Inputs for the Outputs of the Device.
Document Number: 001-53197 Rev. *C
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CY7C11611KV18, CY7C11761KV18 CY7C11631KV18, CY7C11651KV18
Functional Overview
The CY7C11611KV18, CY7C11761KV18, CY7C11631KV18, CY7C11651KV18 are synchronous pipelined Burst SRAMs equipped with a read port and a write port. The read port is dedicated to read operations and the write port is dedicated to write operations. Data flows into the SRAM through the write port and flows out through the read port. These devices multiplex the address inputs to minimize the number of address pins required. By having separate read and write ports, the QDR II+ completely eliminates the need to "turn around" the data bus and avoids any possible data contention, thereby simplifying system design. Each access consists of four 8-bit data transfers in the case of CY7C11611KV18, four 9-bit data transfers in the case of CY7C11761KV18, four 18-bit data transfers in the case of CY7C11631KV18, and four 36-bit data transfers in the case of CY7C11651KV18, in two clock cycles. These devices operate with a read latency of two and half cycles when DOFF pin is tied HIGH. When DOFF pin is set LOW or connected to VSS, then device behaves in QDR I mode with a read latency of one clock cycle. Accesses for both ports are initiated on the positive input clock (K). All synchronous input and output timing are referenced from the rising edge of the input clocks (K and K). All synchronous data inputs (D[x:0]) pass through input registers controlled by the input clocks (K and K). All synchronous data outputs (Q[x:0]) also pass through output registers controlled by the rising edge of the input clocks (K and K). All synchronous control (RPS, WPS, NWS[x:0], BWS[x:0]) inputs pass through input registers controlled by the rising edge of the input clocks (K and K). CY7C11631KV18 is described in the following sections. The same basic descriptions apply to CY7C11611KV18, CY7C11761KV18 and CY7C11651KV18. transferred out of the device on every rising edge of the input clocks (K and K). When the read port is deselected, the CY7C11631KV18 first completes the pending read transactions. Synchronous internal circuitry automatically tristates the outputs following the next rising edge of the negative input clock (K). This enables a seamless transition between devices without the insertion of wait states in a depth expanded memory.
Write Operations
Write operations are initiated by asserting WPS active at the rising edge of the positive input clock (K). On the following K clock rise, the data presented to D[17:0] is latched and stored into the lower 18-bit write data register, provided BWS[1:0] are both asserted active. On the subsequent rising edge of the negative input clock (K) the information presented to D[17:0] is also stored into the write data register, provided BWS[1:0] are both asserted active. This process continues for one more cycle until four 18-bit words (a total of 72 bits) of data are stored in the SRAM. The 72 bits of data are then written into the memory array at the specified location. Therefore, write accesses to the device cannot be initiated on two consecutive K clock rises. The internal logic of the device ignores the second write request. Write accesses can be initiated on every other rising edge of the positive input clock (K). Doing so pipelines the data flow such that 18 bits of data can be transferred into the device on every rising edge of the input clocks (K and K). When deselected, the write port ignores all inputs after the pending write operations have been completed.
Byte Write Operations
Byte write operations are supported by the CY7C11631KV18. A write operation is initiated as described in the Write Operations section. The bytes that are written are determined by BWS0 and BWS1, which are sampled with each set of 18-bit data words. Asserting the appropriate Byte Write Select input during the data portion of a write latches the data being presented and writes it into the device. Deasserting the Byte Write Select input during the data portion of a write enables the data stored in the device for that byte to remain unaltered. This feature can be used to simplify read, modify, or write operations to a byte write operation.
Read Operations
The CY7C11631KV18 is organized internally as four arrays of 256K x 18. Accesses are completed in a burst of four sequential 18-bit data words. Read operations are initiated by asserting RPS active at the rising edge of the positive input clock (K). The address presented to the address inputs is stored in the read address register. Following the next two K clock rise, the corresponding lowest order 18-bit word of data is driven onto the Q[17:0] using K as the output timing reference. On the subsequent rising edge of K, the next 18-bit data word is driven onto the Q[17:0]. This process continues until all four 18-bit data words have been driven out onto Q[17:0]. The requested data is valid 0.45 ns from the rising edge of the input clock (K or K). To maintain the internal logic, each read access must be allowed to complete. Each read access consists of four 18-bit data words and takes two clock cycles to complete. Therefore, read accesses to the device cannot be initiated on two consecutive K clock rises. The internal logic of the device ignores the second read request. Read accesses can be initiated on every other K clock rise. Doing so pipelines the data flow such that data is Document Number: 001-53197 Rev. *C
Concurrent Transactions
The read and write ports on the CY7C11631KV18 operates completely independently of one another. As each port latches the address inputs on different clock edges, the user can read or write to any location, regardless of the transaction on the other port. If the ports access the same location when a read follows a write in successive clock cycles, the SRAM delivers the most recent information associated with the specified address location. This includes forwarding data from a write cycle that was initiated on the previous K clock rise.
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CY7C11611KV18, CY7C11761KV18 CY7C11631KV18, CY7C11651KV18
Read access and write access must be scheduled such that one transaction is initiated on any clock cycle. If both ports are selected on the same K clock rise, the arbitration depends on the previous state of the SRAM. If both ports are deselected, the read port takes priority. If a read was initiated on the previous cycle, the write port takes priority (as read operations cannot be initiated on consecutive cycles). If a write was initiated on the previous cycle, the read port takes priority (as write operations cannot be initiated on consecutive cycles). Therefore, asserting both port selects active from a deselected state results in alternating read or write operations being initiated, with the first access being a read.
Echo Clocks
Echo clocks are provided on the QDR II+ to simplify data capture on high speed systems. Two echo clocks are generated by the QDR II+. CQ is referenced with respect to K and CQ is referenced with respect to K. These are free-running clocks and are synchronized to the input clock of the QDR II+. The timing for the echo clocks is shown in the Switching Characteristics on page 24.
Valid Data Indicator (QVLD)
QVLD is provided on the QDR II+ to simplify data capture on high speed systems. The QVLD is generated by the QDR II+ device along with data output. This signal is also edge-aligned with the echo clock and follows the timing of any data pin. This signal is asserted half a cycle before valid data arrives.
Depth Expansion
The CY7C11631KV18 has a port select input for each port. This enables easy depth expansion. Both port selects are sampled on the rising edge of the positive input clock only (K). Each port select input can deselect the specified port. Deselecting a port does not affect the other port. All pending transactions (read and write) are completed before the device is deselected.
PLL
These chips use a PLL that is designed to function between 120 MHz and the specified maximum clock frequency. During power up, when the DOFF is tied HIGH, the PLL is locked after 20 s of stable clock. The PLL can also be reset by slowing or stopping the input clocks K and K for a minimum of 30 ns. However, it is not necessary to reset the PLL to lock to the desired frequency. The PLL automatically locks 20 s after a stable clock is presented. The PLL may be disabled by applying ground to the DOFF pin. When the PLL is turned off, the device behaves in QDR I mode (with one cycle latency and a longer access time). For more information, refer to the application note, PLL Considerations in QDRII/DDRII/QDRII+/DDRII+.
Programmable Impedance
An external resistor, RQ, must be connected between the ZQ pin on the SRAM and VSS to allow the SRAM to adjust its output driver impedance. The value of RQ must be 5X the value of the intended line impedance driven by the SRAM, the allowable range of RQ to guarantee impedance matching with a tolerance of 15% is between 175 and 350, with VDDQ = 1.5V. The output impedance is adjusted every 1024 cycles upon power up to account for drifts in supply voltage and temperature.
Application Example
Figure 1
shows two QDR II+ used in an application. Figure 1. Application Example
Vt R
ZQ SRAM #1 CQ/CQ Q D A RPS WPS BWS K K
RQ = 250 ohms
D A
CQ/CQ Q RPS WPS BWS K K
SRAM #2
ZQ
RQ = 250 ohms
DATA IN DATA OUT Address
R R
Vt Vt
BUS MASTER RPS (CPU or ASIC) WPS
BWS CLKIN1/CLKIN1 CLKIN2/CLKIN2 Source K Source K R R = 50ohms, Vt = VDDQ /2
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The truth table for CY7C11611KV18, CY7C11761KV18, CY7C11631KV18, and CY7C11651KV18 follows. [3, 4, 5, 6, 7, 8] Table 3. Truth Table Operation Write Cycle: Load address on the rising edge of K; input write data on two consecutive K and K rising edges. Read Cycle: (2.5 cycle Latency) Load address on the rising edge of K; wait two and half cycles; read data on two consecutive K and K rising edges. NOP: No Operation Standby: Clock Stopped K L-H RPS WPS H
[9]
DQ
DQ
DQ
DQ
L
[10]
D(A) at K(t + 1) D(A + 1) at K(t + 1) D(A + 2) at K(t + 2) D(A + 3) at K(t + 2)
L-H
L [10]
X
Q(A) at K(t + 2) Q(A + 1) at K(t + 3) Q(A + 2) at K(t + 3) Q(A + 3) at K(t + 4)
L-H Stopped
H X
H X
D=X Q = High Z Previous State
D=X Q = High Z Previous State
D=X Q = High Z Previous State
D=X Q = High Z Previous State
The write cycle description table for CY7C11611KV18 and CY7C11631KV18 follows. [3, 11] Table 4. Write Cycle Descriptions BWS0/ BWS1/ NWS0 L NWS1 L K L-H K - Comments During the data portion of a write sequence CY7C11611KV18 both nibbles (D[7:0]) are written into the device. CY7C11631KV18 both bytes (D[17:0]) are written into the device.
L
L
-
L-H During the data portion of a write sequence CY7C11611KV18 both nibbles (D[7:0]) are written into the device. CY7C11631KV18 both bytes (D[17:0]) are written into the device. - During the data portion of a write sequence CY7C11611KV18 only the lower nibble (D[3:0]) is written into the device, D[7:4] remains unaltered. CY7C11631KV18 only the lower byte (D[8:0]) is written into the device, D[17:9] remains unaltered.
L
H
L-H
L
H
-
L-H During the data portion of a write sequence CY7C11611KV18 only the lower nibble (D[3:0]) is written into the device, D[7:4] remains unaltered. CY7C11631KV18 only the lower byte (D[8:0]) is written into the device, D[17:9] remains unaltered. - During the data portion of a write sequence CY7C11611KV18 only the upper nibble (D[7:4]) is written into the device, D[3:0] remains unaltered. CY7C11631KV18 only the upper byte (D[17:9]) is written into the device, D[8:0] remains unaltered.
H
L
L-H
H
L
-
L-H During the data portion of a write sequence CY7C11611KV18 only the upper nibble (D[7:4]) is written into the device, D[3:0] remains unaltered. CY7C11631KV18 only the upper byte (D[17:9]) is written into the device, D[8:0] remains unaltered. - No data is written into the devices during this portion of a write operation. L-H No data is written into the devices during this portion of a write operation.
H H
H H
L-H -
Notes 3. X = "Don't Care," H = Logic HIGH, L = Logic LOW, represents rising edge. 4. Device powers up deselected with the outputs in a tristate condition. 5. "A" represents address location latched by the devices when transaction was initiated. A + 1, A + 2, and A + 3 represents the address sequence in the burst. 6. "t" represents the cycle at which a read/write operation is started. t + 1, t + 2, and t + 3 are the first, second and third clock cycles respectively succeeding the "t" clock cycle. 7. Data inputs are registered at K and K rising edges. Data outputs are delivered on K and K rising edges as well. 8. It is recommended that K = K = HIGH when clock is stopped. This is not essential, but permits most rapid restart by overcoming transmission line charging symmetrically. 9. If this signal was LOW to initiate the previous cycle, this signal becomes a "Don't Care" for this operation. 10. This signal was HIGH on previous K clock rise. Initiating consecutive read or write operations on consecutive K clock rises is not permitted. The device ignores the second read or write request. 11. Is based on a write cycle that was initiated in accordance with Table 4. NWS0, NWS1, BWS0, BWS1, BWS2, and BWS3 can be altered on different portions of a write cycle, as long as the setup and hold requirements are achieved.
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The write cycle description table for CY7C11761KV18 follows. [3, 11] Table 5. Write Cycle Descriptions BWS0 L L H H K L-H - L-H - K - L-H - L-H Comments During the data portion of a write sequence, the single byte (D[8:0]) is written into the device. During the data portion of a write sequence, the single byte (D[8:0]) is written into the device. No data is written into the device during this portion of a write operation. No data is written into the device during this portion of a write operation.
The write cycle description table for CY7C11651KV18 follows. [3, 11] Table 6. Write Cycle Descriptions BWS0 L L L L H H H H H H H H BWS1 L L H H L L H H H H H H BWS2 L L H H H H L L H H H H BWS3 L L H H H H H H L L H H K L-H - L-H - L-H - L-H - L-H - L-H - K - Comments During the data portion of a write sequence, all four bytes (D[35:0]) are written into the device.
L-H During the data portion of a write sequence, all four bytes (D[35:0]) are written into the device. - During the data portion of a write sequence, only the lower byte (D[8:0]) is written into the device. D[35:9] remains unaltered.
L-H During the data portion of a write sequence, only the lower byte (D[8:0]) is written into the device. D[35:9] remains unaltered. - During the data portion of a write sequence, only the byte (D[17:9]) is written into the device. D[8:0] and D[35:18] remains unaltered.
L-H During the data portion of a write sequence, only the byte (D[17:9]) is written into the device. D[8:0] and D[35:18] remains unaltered. - During the data portion of a write sequence, only the byte (D[26:18]) is written into the device. D[17:0] and D[35:27] remains unaltered.
L-H During the data portion of a write sequence, only the byte (D[26:18]) is written into the device. D[17:0] and D[35:27] remains unaltered. - During the data portion of a write sequence, only the byte (D[35:27]) is written into the device. D[26:0] remains unaltered.
L-H During the data portion of a write sequence, only the byte (D[35:27]) is written into the device. D[26:0] remains unaltered. - No data is written into the device during this portion of a write operation. L-H No data is written into the device during this portion of a write operation.
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IEEE 1149.1 Serial Boundary Scan (JTAG)
These SRAMs incorporate a serial boundary scan Test Access Port (TAP) in the FBGA package. This part is fully compliant with IEEE Standard #1149.1-2001. The TAP operates using JEDEC standard 1.8V I/O logic levels. Instruction Register Three-bit instructions can be serially loaded into the instruction register. This register is loaded when it is placed between the TDI and TDO pins, as shown in Figure 3 on page 16. Upon power up, the instruction register is loaded with the IDCODE instruction. It is also loaded with the IDCODE instruction if the controller is placed in a reset state, as described in the previous section. When the TAP controller is in the Capture-IR state, the two least significant bits are loaded with a binary "01" pattern to allow for fault isolation of the board level serial test path. Bypass Register To save time when serially shifting data through registers, it is sometimes advantageous to skip certain chips. The bypass register is a single-bit register that can be placed between TDI and TDO pins. This enables shifting of data through the SRAM with minimal delay. The bypass register is set LOW (VSS) when the BYPASS instruction is executed. Boundary Scan Register The boundary scan register is connected to all of the input and output pins on the SRAM. Several No Connect (NC) pins are also included in the scan register to reserve pins for higher density devices. The boundary scan register is loaded with the contents of the RAM input and output ring when the TAP controller is in the Capture-DR state and is then placed between the TDI and TDO pins when the controller is moved to the Shift-DR state. The EXTEST, SAMPLE/PRELOAD, and SAMPLE Z instructions can be used to capture the contents of the input and output ring. Table 10 on page 19 shows the order in which the bits are connected. Each bit corresponds to one of the bumps on the SRAM package. The MSB of the register is connected to TDI, and the LSB is connected to TDO. Identification (ID) Register The ID register is loaded with a vendor-specific, 32-bit code during the Capture-DR state when the IDCODE command is loaded in the instruction register. The IDCODE is hardwired into the SRAM and can be shifted out when the TAP controller is in the Shift-DR state. The ID register has a vendor code and other information described in Table 7 on page 18.
Disabling the JTAG Feature
It is possible to operate the SRAM without using the JTAG feature. To disable the TAP controller, TCK must be tied LOW (VSS) to prevent clocking of the device. TDI and TMS are internally pulled up and may be unconnected. They may alternatively be connected to VDD through a pull up resistor. TDO must be left unconnected. Upon power up, the device comes up in a reset state, which does not interfere with the operation of the device.
Test Access Port--Test Clock
The test clock is used only with the TAP controller. All inputs are captured on the rising edge of TCK. All outputs are driven from the falling edge of TCK.
Test Mode Select (TMS)
The TMS input is used to give commands to the TAP controller and is sampled on the rising edge of TCK. This pin may be left unconnected if the TAP is not used. The pin is pulled up internally, resulting in a logic HIGH level.
Test Data-In (TDI)
The TDI pin is used to serially input information into the registers and can be connected to the input of any of the registers. The register between TDI and TDO is chosen by the instruction that is loaded into the TAP instruction register. For information on loading the instruction register, see Figure 2 on page 15. TDI is internally pulled up and can be unconnected if the TAP is unused in an application. TDI is connected to the most significant bit (MSB) on any register.
Test Data-Out (TDO)
The TDO output pin is used to serially clock data out from the registers. The output is active, depending upon the current state of the TAP state machine (see Table 9 on page 18). The output changes on the falling edge of TCK. TDO is connected to the least significant bit (LSB) of any register.
Performing a TAP Reset
A Reset is performed by forcing TMS HIGH (VDD) for five rising edges of TCK. This Reset does not affect the operation of the SRAM and can be performed while the SRAM is operating. At power up, the TAP is reset internally to ensure that TDO comes up in a High Z state.
TAP Instruction Set
Eight different instructions are possible with the three-bit instruction register. All combinations are listed in Table 9 on page 18. Three of these instructions are listed as RESERVED and must not be used. The other five instructions are described in this section in detail. Instructions are loaded into the TAP controller during the Shift-IR state when the instruction register is placed between TDI and TDO. During this state, instructions are shifted through the instruction register through the TDI and TDO pins. To execute the instruction after it is shifted in, the TAP controller must be moved into the Update-IR state.
TAP Registers
Registers are connected between the TDI and TDO pins to scan the data in and out of the SRAM test circuitry. Only one register can be selected at a time through the instruction registers. Data is serially loaded into the TDI pin on the rising edge of TCK. Data is output on the TDO pin on the falling edge of TCK.
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IDCODE The IDCODE instruction loads a vendor-specific, 32-bit code into the instruction register. It also places the instruction register between the TDI and TDO pins and shifts the IDCODE out of the device when the TAP controller enters the Shift-DR state. The IDCODE instruction is loaded into the instruction register at power up or whenever the TAP controller is supplied a Test-Logic-Reset state. SAMPLE Z The SAMPLE Z instruction connects the boundary scan register between the TDI and TDO pins when the TAP controller is in a Shift-DR state. The SAMPLE Z command puts the output bus into a High Z state until the next command is supplied during the Update IR state. SAMPLE/PRELOAD SAMPLE/PRELOAD is a 1149.1 mandatory instruction. When the SAMPLE/PRELOAD instructions are loaded into the instruction register and the TAP controller is in the Capture-DR state, a snapshot of data on the input and output pins is captured in the boundary scan register. The user must be aware that the TAP controller clock can only operate at a frequency up to 20 MHz, while the SRAM clock operates more than an order of magnitude faster. Because there is a large difference in the clock frequencies, it is possible that during the Capture-DR state, an input or output undergoes a transition. The TAP may then try to capture a signal while in transition (metastable state). This does not harm the device, but there is no guarantee as to the value that is captured. Repeatable results may not be possible. To guarantee that the boundary scan register captures the correct value of a signal, the SRAM signal must be stabilized long enough to meet the TAP controller's capture setup plus hold times (tCS and tCH). The SRAM clock input might not be captured correctly if there is no way in a design to stop (or slow) the clock during a SAMPLE/PRELOAD instruction. If this is an issue, it is still possible to capture all other signals and simply ignore the value of the CK and CK captured in the boundary scan register. After the data is captured, it is possible to shift out the data by putting the TAP into the Shift-DR state. This places the boundary scan register between the TDI and TDO pins. PRELOAD places an initial data pattern at the latched parallel outputs of the boundary scan register cells before the selection of another boundary scan test operation. The shifting of data for the SAMPLE and PRELOAD phases can occur concurrently when required, that is, while the data captured is shifted out, the preloaded data can be shifted in. BYPASS When the BYPASS instruction is loaded in the instruction register and the TAP is placed in a Shift-DR state, the bypass register is placed between the TDI and TDO pins. The advantage of the BYPASS instruction is that it shortens the boundary scan path when multiple devices are connected together on a board. EXTEST The EXTEST instruction drives the preloaded data out through the system output pins. This instruction also connects the boundary scan register for serial access between the TDI and TDO in the Shift-DR controller state. EXTEST OUTPUT BUS TRISTATE IEEE Standard 1149.1 mandates that the TAP controller be able to put the output bus into a tristate mode. The boundary scan register has a special bit located at bit #108. When this scan cell, called the "extest output bus tristate," is latched into the preload register during the Update-DR state in the TAP controller, it directly controls the state of the output (Q-bus) pins, when the EXTEST is entered as the current instruction. When HIGH, it enables the output buffers to drive the output bus. When LOW, this bit places the output bus into a High Z condition. This bit can be set by entering the SAMPLE/PRELOAD or EXTEST command, and then shifting the desired bit into that cell, during the Shift-DR state. During Update-DR, the value loaded into that shift-register cell latches into the preload register. When the EXTEST instruction is entered, this bit directly controls the output Q-bus pins. Note that this bit is preset HIGH to enable the output when the device is powered up, and also when the TAP controller is in the Test-Logic-Reset state. Reserved These instructions are not implemented but are reserved for future use. Do not use these instructions.
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The state diagram for the TAP controller follows. [12] Figure 2. TAP Controller State Diagram
1
TEST-LOGIC RESET 0 1 SELECT IR-SCAN 0 1 CAPTURE-DR 0 SHIFT-DR 1 EXIT1-DR 0 PAUSE-DR 1 0 EXIT2-DR 1 UPDATE-DR 1 0 1 0 0 1 0 CAPTURE-IR 0 SHIFT-IR 1 EXIT1-IR 0 PAUSE-IR 1 EXIT2-IR 1 UPDATE-IR 0 0 1 0
0
TEST-LOGIC/ IDLE
1
SELECT DR-SCAN 0 1
1
Note 12. The 0/1 next to each state represents the value at TMS at the rising edge of TCK.
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Figure 3. TAP Controller Block Diagram
0 Bypass Register 2 TDI Selection Circuitry 31 Instruction Register 30 29 . . 2 1 0 1 0 Selection Circuitry TDO
Identification Register 108 . . . . 2 1 0
Boundary Scan Register
TCK TMS TAP Controller
TAP Electrical Characteristics
Over the Operating Range [13, 14, 15] Parameter VOH1 VOH2 VOL1 VOL2 VIH VIL IX Description Output HIGH Voltage Output HIGH Voltage Output LOW Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage Input and Output Load Current GND VI VDD Test Conditions IOH =2.0 mA IOH =100 A IOL = 2.0 mA IOL = 100 A -0.3 -5 Min 1.4 1.6 0.4 0.2 0.65VDD VDD + 0.3 0.35VDD 5 Max Unit V V V V V V A
Notes 13. These characteristics pertain to the TAP inputs (TMS, TCK, TDI and TDO). Parallel load levels are specified in the DC Electrical Characteristics Table. 14. Overshoot: VIH(AC) < VDDQ + 0.35V (Pulse width less than tCYC/2), Undershoot: VIL(AC) > 0.3V (Pulse width less than tCYC/2). 15. All Voltage referenced to Ground.
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TAP AC Switching Characteristics
Over the Operating Range [16, 17] Parameter tTCYC tTF tTH tTL Setup Times tTMSS tTDIS tCS Hold Times tTMSH tTDIH tCH Output Times tTDOV tTDOX TCK Clock LOW to TDO Valid TCK Clock LOW to TDO Invalid 0 10 ns ns TMS Hold after TCK Clock Rise TDI Hold after Clock Rise Capture Hold after Clock Rise 5 5 5 ns ns ns TMS Setup to TCK Clock Rise TDI Setup to TCK Clock Rise Capture Setup to TCK Rise 5 5 5 ns ns ns TCK Clock Cycle Time TCK Clock Frequency TCK Clock HIGH TCK Clock LOW 20 20 Description Min 50 20 Max Unit ns MHz ns ns
TAP Timing and Test Conditions
Figure 4 shows the TAP timing and test conditions. [17] Figure 4. TAP Timing and Test Conditions
0.9V 50 TDO Z0 = 50 CL = 20 pF
ALL INPUT PULSES
1.8V 0.9V 0V
(a)
GND
tTH
tTL
Test Clock TCK
tTMSS tTMSH
tTCYC
Test Mode Select TMS
tTDIS tTDIH
Test Data In TDI
Test Data Out TDO
tTDOV tTDOX
Notes 16. tCS and tCH refer to the setup and hold time requirements of latching data from the boundary scan register. 17. Test conditions are specified using the load in TAP AC Test Conditions. tR/tF = 1 ns.
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Table 7. Identification Register Definitions Instruction Field Revision Number (31:29) Value CY7C11611KV18 000 CY7C11761KV18 000 CY7C11631KV18 000 CY7C11651KV18 000 Description Version number.
Cypress Device ID 11010010001000100 11010010001001100 11010010001010100 11010010001100100 Defines the type of (28:12) SRAM. Cypress JEDEC ID (11:1) ID Register Presence (0) 00000110100 00000110100 00000110100 00000110100 Allows unique identification of SRAM vendor. Indicates the presence of an ID register.
1
1
1
1
Table 8. Scan Register Sizes Register Name Instruction Bypass ID Boundary Scan Table 9. Instruction Codes Instruction EXTEST IDCODE SAMPLE Z RESERVED SAMPLE/PRELOAD RESERVED RESERVED BYPASS Code 000 001 010 011 100 101 110 111 Description Captures the input and output ring contents. Loads the ID register with the vendor ID code and places the register between TDI and TDO. This operation does not affect SRAM operation. Captures the input and output contents. Places the boundary scan register between TDI and TDO. Forces all SRAM output drivers to a High Z state. Do Not Use: This instruction is reserved for future use. Captures the input and output ring contents. Places the boundary scan register between TDI and TDO. Does not affect the SRAM operation. Do Not Use: This instruction is reserved for future use. Do Not Use: This instruction is reserved for future use. Places the bypass register between TDI and TDO. This operation does not affect SRAM operation. Bit Size 3 1 32 109
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Table 10. Boundary Scan Order Bit # 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 Bump ID 6R 6P 6N 7P 7N 7R 8R 8P 9R 11P 10P 10N 9P 10M 11N 9M 9N 11L 11M 9L 10L 11K 10K 9J 9K 10J 11J 11H Bit # 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 Bump ID 10G 9G 11F 11G 9F 10F 11E 10E 10D 9E 10C 11D 9C 9D 11B 11C 9B 10B 11A 10A 9A 8B 7C 6C 8A 7A 7B 6B Bit # 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 Bump ID 6A 5B 5A 4A 5C 4B 3A 2A 1A 2B 3B 1C 1B 3D 3C 1D 2C 3E 2D 2E 1E 2F 3F 1G 1F 3G 2G 1H Bit # 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 Bump ID 1J 2J 3K 3J 2K 1K 2L 3L 1M 1L 3N 3M 1N 2M 3P 2N 2P 1P 3R 4R 4P 5P 5N 5R Internal
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Power Up Sequence in QDR II+ SRAM
QDR II+ SRAMs must be powered up and initialized in a predefined manner to prevent undefined operations.
PLL Constraints

PLL uses K clock as its synchronizing input. The input must have low phase jitter, which is specified as tKC Var. The PLL functions at frequencies down to 120 MHz. If the input clock is unstable and the PLL is enabled, then the PLL may lock onto an incorrect frequency, causing unstable SRAM behavior. To avoid this, provide 20 s of stable clock to relock to the desired clock frequency.
Power Up Sequence
Apply power and drive DOFF either HIGH or LOW (All other inputs can be HIGH or LOW). Apply VDD before VDDQ. Apply VDDQ before VREF or at the same time as VREF. Drive DOFF HIGH. Provide stable DOFF (HIGH), power and clock (K, K) for 20 s to lock the PLL.
Figure 5. Power Up Waveforms
K K
~ ~
Unstable Clock
> 20 s Stable clock
~ ~
Start Normal Operation
Clock Start (Clock Starts after V DD / V DDQ Stable)
VDD / VDDQ
DOFF
V DD / V DDQ Stable (< +/- 0.1V DC per 50ns ) Fix HIGH (or tie to VDDQ)
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Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the device. User guidelines are not tested. Storage Temperature ............................... -65 C to +150 C Ambient Temperature with Power Applied -55 C to +125 C Supply Voltage on VDD Relative to GND ........-0.5V to +2.9V Supply Voltage on VDDQ Relative to GND ...... -0.5V to +VDD DC Applied to Outputs in High Z ........ -0.5V to VDDQ + 0.3V DC Input Voltage [14] .............................. -0.5V to VDD + 0.3V Current into Outputs (LOW)......................................... 20 mA Static Discharge Voltage (MIL-STD-883, M. 3015).. > 2001V Latch Up Current ................................................... > 200 mA SEL LMBU
Neutron Soft Error Immunity
Test Parameter Description Conditions Typ Max* LSBU Logical Single-Bit Upsets Logical Multi-Bit Upsets Single Event Latch up 25 C 25 C 197 0 216 0.01 Unit FIT/ Mb FIT/ Mb FIT/ Dev
85 C
0
0.1
Operating Range
Range Commercial Industrial Ambient Temperature (TA) 0 C to +70 C -40 C to +85 C VDD [18] 1.8 0.1V VDDQ [18] 1.4V to VDD
* No LMBU or SEL events occurred during testing; this column represents a statistical 2, 95% confidence limit calculation. For more details refer to Application Note AN 54908 "Accelerated Neutron SER Testing and Calculation of Terrestrial Failure Rates"
Electrical Characteristics
DC Electrical Characteristics
Over the Operating Range [15] Parameter VDD VDDQ VOH VOL VOH(LOW) VOL(LOW) VIH VIL IX IOZ VREF Description Power Supply Voltage I/O Supply Voltage Output HIGH Voltage Output LOW Voltage Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage Input Leakage Current Output Leakage Current Input Reference Voltage [21] Test Conditions Min Typ Max Unit 1.7 1.8 1.9 V 1.4 1.5 VDD V VDDQ/2 - 0.12 VDDQ/2 + 0.12 V VDDQ/2 - 0.12 VDDQ/2 + 0.12 V VDDQ - 0.2 VDDQ V VSS 0.2 V VREF + 0.1 VDDQ + 0.15 V -0.15 VREF - 0.1 V 2 2 A 2 2 A 0.68 0.75 0.95 V
Note 19 Note 20 IOH =0.1 mA, Nominal Impedance IOL = 0.1 mA, Nominal Impedance
GND VI VDDQ GND VI VDDQ, Output Disabled Typical Value = 0.75V
Notes 18. Power up: Assumes a linear ramp from 0V to VDD(min) within 200 ms. During this time VIH < VDD and VDDQ < VDD. 19. Output are impedance controlled. IOH = (VDDQ/2)/(RQ/5) for values of 175 ohms <= RQ <= 350 ohms. 20. Output are impedance controlled. IOL = (VDDQ/2)/(RQ/5) for values of 175 ohms <= RQ <= 350 ohms. 21. VREF (min) = 0.68V or 0.46VDDQ, whichever is larger, VREF (max) = 0.95V or 0.54VDDQ, whichever is smaller.
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DC Electrical Characteristics (continued)
Over the Operating Range [15] Parameter IDD
[22]
Description VDD Operating Supply
Test Conditions VDD = Max, 550 MHz IOUT = 0 mA, f = fMAX = 1/tCYC 500 MHz
Min (x8) (x9) (x18) (x36) (x8) (x9) (x18) (x36) (x8) (x9) (x18) (x36) (x8) (x9) (x18) (x36) (x8) (x9) (x18) (x36) (x8) (x9) (x18) (x36) (x8) (x9) (x18) (x36) (x8) (x9) (x18) (x36)
Typ
Max 900 900 920 1310 830 830 850 1210 760 760 780 1100 690 690 710 1000 380 380 380 380 360 360 360 360 340 340 340 340 320 320 320 320
Unit mA
mA
450 MHz
mA
400 MHz
mA
ISB1
Automatic Power Down Current
Max VDD, Both Ports Deselected, VIN VIH or VIN VIL f = fMAX = 1/tCYC, Inputs Static
550 MHz
mA
500 MHz
mA
450 MHz
mA
400 MHz
mA
AC Electrical Characteristics
Over the Operating Range [14] Parameter VIH VIL Description Input HIGH Voltage Input LOW Voltage Test Conditions Min VREF + 0.2 -0.24 Typ - - Max VDDQ + 0.24 VREF - 0.2 Unit V V
Note 22. The operation current is calculated with 50% read cycle and 50% write cycle.
Document Number: 001-53197 Rev. *C
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Capacitance
Tested initially and after any design or process change that may affect these parameters. Parameter CIN CO Description Input Capacitance Output Capacitance Test Conditions TA = 25 C, f = 1 MHz, VDD = 1.8V, VDDQ = 1.5V Max 4 4 Unit pF pF
Thermal Resistance
Tested initially and after any design or process change that may affect these parameters. Parameter JA JC Description Thermal Resistance (Junction to Ambient) Thermal Resistance (Junction to Case) Test Conditions Test conditions follow standard test methods and procedures for measuring thermal impedance, in accordance with EIA/JESD51. 165 FBGA Package 13.7 3.73 Unit C/W C/W
Figure 6. AC Test Loads and Waveforms
VREF = 0.75V VREF OUTPUT Device Under Test Z0 = 50 RL = 50 VREF = 0.75V 0.75V VREF OUTPUT Device Under Test ZQ 5 pF 0.25V Slew Rate = 2 V/ns 0.75V R = 50 ALL INPUT PULSES 1.25V 0.75V
[23]
ZQ
(a)
RQ = 250
INCLUDING JIG AND SCOPE
RQ = 250 (b)
Note 23. Unless otherwise noted, test conditions are based on signal transition time of 2V/ns, timing reference levels of 0.75V, Vref = 0.75V, RQ = 250, VDDQ = 1.5V, input pulse levels of 0.25V to 1.25V, and output loading of the specified IOL/IOH and load capacitance shown in (a) of Figure 6.
Document Number: 001-53197 Rev. *C
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Switching Characteristics
Over the Operating Range [23, 24] Cypress Consortium Parameter Parameter tPOWER tCYC tKH tKL tKHKH tKHKH tKHKL tKLKH tKHKH Description VDD(Typical) to the First Access [25] K Clock Cycle Time Input Clock (K/K) HIGH Input Clock (K/K) LOW K Clock Rise to K Clock Rise (rising edge to rising edge) Address Setup to K Clock Rise Control Setup to K Clock Rise (RPS, WPS) Double Data Rate Control Setup to Clock (K/K) Rise (BWS0, BWS1, BWS2, BWS3) D[X:0] Setup to Clock (K/K) Rise 550 MHz 500 MHz 450 MHz 400 MHz Min Max Min Max Min Max Min Max 1 1 1 1 1.81 8.4 2.0 8.4 2.2 8.4 2.5 8.4 0.4 0.4 0.77 - - - 0.4 0.4 0.85 - - - 0.4 0.4 0.94 - - - 0.4 0.4 1.06 - - - Unit ms ns ns ns ns
Setup Times tSA tAVKH tSC tIVKH tSCDDR tIVKH tSD tDVKH
0.23 0.23 0.18 0.18
- - - - - - - -
0.25 0.25 0.20 0.20 0.25 0.25 0.20 0.20
- - - - - - - -
0.275 0.275 0.22 0.22 0.275 0.275 0.22 0.22
- - - - - - - -
0.4 0.4 0.28 0.28 0.4 0.4 0.28 0.28
- - - - - - - -
ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns s ns
Hold Times tKHAX tHA tKHIX tHC tHCDDR tKHIX tHD tKHDX
0.23 Address Hold after K Clock Rise Control Hold after K Clock Rise (RPS, WPS) 0.23 Double Data Rate Control Hold after Clock (K/K) 0.18 Rise (BWS0, BWS1, BWS2, BWS3) D[X:0] Hold after Clock (K/K) Rise K/K Clock Rise to Data Valid Data Output Hold after Output K/K Clock Rise (Active to Active) K/K Clock Rise to Echo Clock Valid Echo Clock Hold after K/K Clock Rise Echo Clock High to Data Valid Echo Clock High to Data Invalid Output Clock (CQ/CQ) HIGH [26] CQ Clock Rise to CQ Clock Rise (rising edge to rising edge) [26] Clock (K/K) Rise to High Z (Active to High Z) [27, 28] Clock (K/K) Rise to Low Z [27, 28] Echo Clock High to QVLD Valid [29] Clock Phase Jitter PLL Lock Time (K) K Static to PLL Reset [30] 0.18
Output Times tCHQV tCO tCHQX tDOH tCCQO tCQOH tCQD tCQDOH tCQH tCQHCQH tCHZ tCLZ tCHCQV tCHCQX tCQHQV tCQHQX tCQHCQL tCQHCQH tCHQZ
- 0.45 - 0.45 - 0.45 - 0.45 -0.45 - -0.45 - -0.45 - -0.45 - - 0.45 - 0.45 - 0.45 - 0.45 -0.45 - -0.45 - -0.45 - -0.45 - -0.15 0.655 0.655 - 0.15 0.15 0.15 0.20 - -0.15 - -0.15 - -0.20 - - 0.75 - 0.85 - 1.0 - - 0.75 - 0.85 - 1.0 - 0.45 - 0.45 - 0.45 - 0.45
tCHQX1 tQVLD tCQHQVLD PLL Timing tKC Var tKC Var tKC lock tKC lock tKC Reset tKC Reset
-0.45 - -0.45 - -0.45 - -0.45 - -0.15 0.15 -0.15 0.15 -0.15 0.15 -0.20 0.20 - 20 30 0.15 - - 20 30 0.15 - - 20 30 0.15 - - 20 30 0.20 -
Notes 24. When a part with a maximum frequency above 400 MHz is operating at a lower clock frequency, it requires the input timings of the frequency range in which it is being operated and outputs data with the output timings of that frequency range. 25. This part has a voltage regulator internally; tPOWER is the time that the power must be supplied above VDD minimum initially before a read or write operation can be initiated. 26. These parameters are extrapolated from the input timing parameters (tCYC/2 - 250 ps, where 250 ps is the internal jitter). These parameters are only guaranteed by design and are not tested in production. 27. tCHZ, tCLZ, are specified with a load capacitance of 5 pF as in (b) of Figure 6 on page 23. Transition is measured 100 mV from steady-state voltage. 28. At any voltage and temperature tCHZ is less than tCLZ and tCHZ less than tCO. 29. tQVLD spec is applicable for both rising and falling edges of QVLD signal. 30. Hold to >VIH or Document Number: 001-53197 Rev. *C
Page 24 of 29
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Switching Waveforms
Read/Write/Deselect Sequence [31, 32, 33]
Figure 7. Waveform for 2.5 Cycle Read Latency
NOP 1
K
t KH t KL
READ 2
t CYC
WRITE 3
t KHKH
READ 4
WRITE 5
NOP 6
7
8
K RPS
t SC tHC t SC t HC
WPS A
t SA A0 t HA t SD A1 t HD D10 t QVLD t
t
A2
A3 t HD D13 D30 D31 D32 D33 tQVLD tDOH tCQD Q01 Q02 Q03 Q20 tCQDOH
t SD D11 D12
D QVLD
CLZ
CO Q00
tCHZ Q23
Q
(Read Latency = 2.5 Cycles) tCQOH
Q21
Q22
tCCQO
CQ
t CQH t CQHCQH tCQOH
t CCQO
CQ
DON'T CARE
UNDEFINED
Notes 31. Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following A0, that is, A0+1. 32. Outputs are disabled (High Z) one clock cycle after a NOP. 33. In this example, if address A2 = A1, then data Q20 = D10, Q21 = D11, Q22 = D12, and Q23 = D13. Write data is forwarded immediately as read results. This note applies to the whole diagram.
Document Number: 001-53197 Rev. *C
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CY7C11611KV18, CY7C11761KV18 CY7C11631KV18, CY7C11651KV18
Ordering Information
The following table contains only the parts that are currently available. If you do not see what you are looking for, contact your local sales representative. For more information, visit the Cypress website at www.cypress.com and refer to the product summary page at http://www.cypress.com/products Cypress maintains a worldwide network of offices, solution centers, manufacturer's representatives and distributors. To find the office closest to you, visit us at http://www.cypress.com/go/datasheet/offices. Table 11. Ordering Information Speed (MHz) 400 Ordering Code CY7C11651KV18-400BZXC Package Diagram Package Type Operating Range
51-85180 165-ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-free Commercial
Ordering Code Definitions
CY 7C 11651 K V18 - 400 BZX C Temperature Range: C = Commercial Package Type: BZX = 165-ball FPBGA (Pb-free) Frequency Range: 400 MHz V18 = 1.8 V Die Revision Part Identifier Marketing Code: 7C = SRAM Company ID: CY = Cypress
Document Number: 001-53197 Rev. *C
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Package Diagram
Figure 8. 165-Ball FBGA (13 x 15 x 1.4 mm), 51-85180
TOP VIEW BOTTOM VIEW PIN 1 CORNER PIN 1 CORNER O0.08
1 A B 11 C A D B E F 10 9 8 7 6 5 4 2 3 4 5 6 7 8 9 10 11
MC MCAB
-0.06 +0.14 3
O0.25 O0.50
(165X)
2 1
1.00
C D
15.000.10
G E H J F
15.000.10
G
K L M
14.00
H J K
N P R
7.00
L M N
A
P R
A 5.00 B 13.000.10 10.00
1.00
1.40 MAX.
0.530.05
0.25 C
B 0.15 C 0.15(4X)
13.000.10
0.36
SEATING PLANE C
NOTES : SOLDER PAD TYPE : NON-SOLDER MASK DEFINED (NSMD) PACKAGE WEIGHT : 0.475g JEDEC REFERENCE : MO-216 / ISSUE E PACKAGE CODE : BB0AC
51-85180 *C
Document Number: 001-53197 Rev. *C
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Document History Page
Document Title: CY7C11611KV18/CY7C11761KV18/CY7C11631KV18/CY7C11651KV18, 18-Mbit QDR(R) II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) Document Number: 001-53197 Rev. ** *A ECN No. 2888780 Orig of Change VKN/NJY Submission Description of Change Date 05/06/09 03/08/10 New datasheet Post to external web Converted from preliminary to final Added Contents Included Soft Error Immunity Data Changed Input Capacitance (CIN) from 2 pF to 4 pF Changed Output Capacitance (CO) from 3 pF to 4 pF Corrected the typo in the hold timing parameters tHCDDR and tHD at 450MHz from 0.28ns to 0.22ns For 550 MHz, 500 MHz and 450 MHz, Changed Output timing parameters tCO, tCCQO, tCHZ specs to 450 ps and tDOH, tCQOH, tCLZ to -450 ps Modified Ordering Information table by including parts that are available and modified the disclaimer for the Ordering information Updated 165-ball package outline diagram Updated links in Sales, Solutions, and Legal Information Included "CY7C11651KV18-400BZXC" in the Ordering information table Updated Ordering Information and added Ordering Code Definitions.
2702744 VKN/PYRS
*B *C
2931775 3158084
VKN NJY
05/13/10 01/31/2011
Document Number: 001-53197 Rev. *C
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Sales, Solutions, and Legal Information
Worldwide Sales and Design Support
Cypress maintains a worldwide network of offices, solution centers, manufacturer's representatives, and distributors. To find the office closest to you, visit us at Cypress Locations.
Products
Automotive Clocks & Buffers Interface Lighting & Power Control Memory Optical & Image Sensing PSoC Touch Sensing USB Controllers Wireless/RF cypress.com/go/automotive cypress.com/go/clocks cypress.com/go/interface cypress.com/go/powerpsoc cypress.com/go/plc cypress.com/go/memory cypress.com/go/image cypress.com/go/psoc cypress.com/go/touch cypress.com/go/USB cypress.com/go/wireless
PSoC Solutions
psoc.cypress.com/solutions PSoC 1 | PSoC 3 | PSoC 5
(c) Cypress Semiconductor Corporation, 2009-2011. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign), United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of, and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without the express written permission of Cypress. Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress' product in a life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Use may be limited by and subject to the applicable Cypress software license agreement.
Document Number: 001-53197 Rev. *C
Revised January 31, 2011
Page 29 of 29
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